Suppression of the internal electric field effects in ZnO/Zn(0.7)Mg(0.3)O quantum wells by ion-implantation induced intermixing.
نویسندگان
چکیده
Strong suppression of the effects caused by the internal electric field in ZnO/ZnMgO quantum wells following ion-implantation and rapid thermal annealing, is revealed by photoluminescence, time-resolved photoluminescence, and band structure calculations. The implantation and annealing induces Zn/Mg intermixing, resulting in graded quantum well interfaces. This reduces the quantum-confined Stark shift and increases electron-hole wavefunction overlap, which significantly reduces the exciton lifetime and increases the oscillator strength.
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عنوان ژورنال:
- Nanotechnology
دوره 19 5 شماره
صفحات -
تاریخ انتشار 2008